ABOUT GERMANIUM

≤ 0.15) is epitaxially developed with a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and then the framework is cycled by means of oxidizing and annealing levels. A result of the preferential oxidation of Si over Ge [sixty eight], the initial Si1–on is summoned by The mixture in the gate voltage and gate capacitance, for